N
O
T RE
CO
MMENDED F
O
R NEW DE
S
I
G
N
NOT RECOMMENDED FOR NEW DESIGN
4
Freescale Semiconductor
RF Product Device Data
MRF373ALR1 MRF373ALSR1
TYPICAL CHARACTERISTICS
C
rss
, CAPACITANCE (pF)
100 10Ciss
50 5Coss
Crss
C
iss
, CAPACITANCE (pF)
C
oss
,
60
0
200
0
0
20
150 15
50
40
30
20
10
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 2. Power Gain versus Output Power
920
5
30
800
52
62
IRL
20 58Gps
η
VDD
= 32 Vdc
25 60
Pout
= 75 W (CW)
IDQ
= 200 mA
f, FREQUENCY (MHz)
Figure 3. Performance in Narrowband Circuit
INPUT RETURN LOSS (dB)
G
ps
, POWER GAIN (dB)
IRL,
, DRAIN EFFICIENCY (%)
η
15 56
10 54
900
880
860
840
820
100
15
20
1
IDQ
= 500 mA
400 mA
VDD
= 32 Vdc
f = 860 MHz
Pout, OUTPUT POWER (WATTS) CW
Figure 4. Capacitance versus Voltage
G
ps
, POWER GAIN (dB)
300 mA
200 mA
100 mA
19
18
17
16
10
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